If the growing SiGe film is thick enough, the heterostructure will be unstrained.
如果外延胜场的SiGe薄片足够厚，这个异质结就会变成非应变的
In this case, the grown film and the substrate have their own bulk Lattice Constants.
在这种情况下，外延胜场的薄片和衬底有它们各自的晶格常数
The two materials, SiGe film and Si substrate have cubic symmetry. That is, the cubic unit cell is for the film and is for the substrate.
这两种材料，即SiGe薄膜和Si基底，具有立方对称性。也就是说，薄膜的立方晶胞为，基底的立方晶胞为
In this case, the atoms of the film and the substrate do NOT have a one-to-one correspondence at the interface.
在这种情况下，薄膜和基底的原子在界面处没有一一对应关系
This results in the formation of defects at the interface of the two materials, called misfit dislocations.
这导致在两种材料的界面处形成缺陷，称为错配位错
