24.10.25.14.00 parameter of some semiconductor

	Si	Ge	GeAs	AlAs	InP	AlP	InAs
Lattice constant (m)	5.431A1	5.658A2					6.0583A3
Band Gap (eV)	1.12 indrect	0.67 0.6614 indirect	1.42 direct	2.12 indirect	1.34 direct	2.5 indirect	0.35 direct3
Electron affinity (eV)	4.05	4.0	4.07				4.93
Dielectric constant	11.9	16.22	12.9				15.15 (stastic) 12.3 (high-frequency)3
		4					5
		4					5
		4					5

Footnotes

1. Basic Parameters of Silicon (Si) ↩

2. Basic Parameters of Germanium (Ge) ↩ ↩²

3. Basic Parameters of Indium Arsenide (InAs) ↩ ↩² ↩³ ↩⁴

4. Band structure and carrier concentration of Germanium (Ge) ↩ ↩² ↩³ ↩⁴

5. Band structure and carrier concentration of Indium Arsenide (InAs) ↩ ↩² ↩³